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CVD Equipment(teos) - List of Manufacturers, Suppliers, Companies and Products

CVD Equipment Product List

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Plasma CVD equipment for thick film formation of SiO2

Plasma CVD equipment for thick film formation of SiO2

Plasma CVD device for thick film formation. High speed and low stress (patent pending).

● The adoption of a unique self-bias method enables high-speed (3000-5000 Å/min) and low-stress film deposition. (Patent pending) ● Low-temperature film deposition is possible at room temperature to about 350°C. Additionally, film deposition on plastics is feasible. ● Unique modifications in the reaction chamber help suppress particle generation. ● The LS-CVD method using liquid source TEOS allows for excellent step coverage and filling effects in film deposition. ● Arbitrary control of the refractive index is possible using liquid sources of Ge, P, and B. In addition to the standard one series, it is possible to add two more series of dopant introduction systems as options.

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Liquid Source Plasma CVD Equipment

Liquid Source Plasma CVD Equipment

A compact and space-efficient device! The substrate supports φ4 inch, and it comes with a heating mechanism and T/S variable mechanism!

This product is a plasma CVD device with a cylinder cabinet designed for liquid raw material sources, including TEOS. It is equipped with a bakeable MFC compatible with liquid sources and various baking mechanisms, and features a uniquely designed plasma electrode to prevent internal abnormal discharges and ensure stable plasma generation. The device allows for substrate replacement and internal maintenance through the opening and closing of the top cover, and it is compact with excellent space efficiency. 【Features】 ■ Equipped with a cylinder cabinet ■ Includes a bakeable MFC compatible with liquid sources and various baking mechanisms ■ Designed with a unique plasma electrode ■ Allows for substrate replacement and internal maintenance through the opening and closing of the top cover ■ Compact and space-efficient *For more details, please refer to the PDF materials or feel free to contact us.

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Single-wafer atmospheric pressure CVD device 'A200V'

Single-wafer atmospheric pressure CVD device 'A200V'

Compact the device size as much as possible! Achieve stable film formation and low particle count.

The "A200V" is a single-wafer atmospheric pressure CVD system compatible with φ150 and φ200 mm wafers, covering production from small quantities of diverse products to mass production. By adopting a face-down film formation method, it demonstrates excellent film thickness uniformity, particle control, and embedding performance, depositing silicon oxide films based on SiH4. Additionally, the system can also support options for TEOS-O3 and SiH4-O3. 【Features】 ■ Face-down position ■ Compact device design and configuration ■ Balancing maintainability and high productivity ■ Excellent film thickness uniformity and embedding capability ■ Ensures safety by preventing operators from directly contacting the heating area *For more details, please refer to the PDF materials or feel free to contact us.

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Plasma CVD equipment

Plasma CVD equipment

It is a device with numerous achievements in mass production of power devices, LEDs, MEMS, etc.

The range of membrane quality control is very broad, allowing us to meet the various membrane quality requirements of our customers. Additionally, we have achieved stable automatic transport for compound wafers and special wafers, which had issues with conventional equipment, contributing to improved yield. In our company, we actively customize each device to reflect our customers' requests as much as possible. We have a demonstration machine permanently installed in-house, so please feel free to consult with us.

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